6413 Mosfet

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6413 Mosfet E
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Current - Continuous Drain (Id) @ 25° C 42A. Rds On (Max) @ Id Vgs 28 mOhm @ 42A 10V. Mounting Type Through Hole. Power - Max 136W. Input Capacitance (Ciss) @ Vds 1800pF @ 25V. NVB6413AN: Power MOSFET 100V 42A 28 mohm Single N-Channel D2PAK Datasheet: MOSFET — Power, N-Channel 100 V, 42 A, 28 mΩ Rev. 4 (132kB) Product Overview.

Type Designator: AON6414A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: DFN5X6

AON6414A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6414A Datasheet (PDF)

0.1. aon6414a.pdf Size:268K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

0.2. aon6414al.pdf Size:384K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

7.1. aon6414.pdf Size:156K _aosemi

AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

Datasheet: AON6400, AON6403, AON6404, AON6404A, AON6405, AON6407, AON6411, AON6413, 75339P, AON6416, AON6424, AON6426, AON6428, AON6435, AON6440, AON6442, AON6444.

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Type Designator: FDPF3N50NZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 27 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO220F

FDPF3N50NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDPF3N50NZ Datasheet (PDF)

0.1. fdpf3n50nz.pdf Size:746K _fairchild_semi

October 2013FDPF3N50NZN-Channel UniFETTM II MOSFET500 V, 3 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF

9.1. fdp33n25 fdpf33n25t.pdf Size:1205K _fairchild_semi

October TMUniFETFDP33N25 / FDPF33N25T 250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switchingThis advanced technolog

9.2. fdpf33n25trdtu.pdf Size:448K _fairchild_semi

August 2014FDPF33N25TN-Channel UniFETTM MOSFET250 V, 33 A, 94 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF)p

9.3. fdpf390n15a.pdf Size:623K _fairchild_semi

July 2011FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mFeatures Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.

9.4. fdp39n20 fdpf39n20.pdf Size:485K _fairchild_semi

April 2007TMUniFETFDP39N20 / FDPF39N20200V N-Channel MOSFETFeatures Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 38 nC)stripe, DMOS technology. Low Crss ( typical 57 pF)This advanced technology has been especially

9.5. fdp39n20 fdpf39n20tldtu.pdf Size:644K _fairchild_semi

August 2014FDP39N20 / FDPF39N20N-Channel UniFETTM MOSFET200 V, 39 A, 66 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5

9.6. fdpf320n06l.pdf Size:220K _fairchild_semi

December 2010FDPF320N06LN-Channel PowerTrench MOSFET 60V, 21A, 25mFeatures Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17Aespecially tailored to minimize the on-state resistance and yet maintain superior sw

9.7. fdpf3860t.pdf Size:641K _fairchild_semi

6413 Mosfet De

March 2008FDPF3860TtmN-Channel PowerTrench MOSFET 100V, 20A, 38.2mDescription General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior sw

9.8. fdpf39n20.pdf Size:274K _inchange_semiconductor

isc N-Channel MOSFET Transistor FDPF39N20FEATURESWith TO-220F packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 66m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

9.9. fdpf390n15a.pdf Size:274K _inchange_semiconductor

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isc N-Channel MOSFET Transistor FDPF390N15AFEATURESWith TO-220F packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 40m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

9.10. fdpf3860t.pdf Size:275K _inchange_semiconductor

isc N-Channel MOSFET Transistor FDPF3860TFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 38.2m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: FDPF2710T, FDPF320N06L, FDPF33N25T, FDPF3860T, STF8236, FDPF390N15A, FDPF39N20, STF8234, IRF530, FDPF44N25T, FDPF51N25, FDPF55N06, FDPF5N50FT, FDPF5N50NZ, FDPF5N50NZF, FDPF5N50NZU, FDPF5N50T.

6413 Mosfet Drive

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